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08-212023Homoepitaxial growth of (100) Si-doped β-Ga2?O3 films via MOCVD
Homoepitaxial growth of Si-doped β-Ga2O3 films on semi-insulating (100) β-Ga2O3 substrates by metalorganic chemical vapor deposition (MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adato ...閱讀全文
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05-252023Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates
β-Ga2O3 is attracting considerable attention for applications in power electronics and deep ultraviolet (DUV) optoelectronics owing to the ultra-wide bandgap of 4.85?eV and amendable n-type conductivity. In this work, we report the achievement of Si-doped β-Ga ...閱讀全文 -
05-252023Tuning the Bandgaps of (AlxGa1?x)2O3 Alloyed Thin Films for High‐Performance
Ga2O3 is a promising semiconductor for deep ultraviolet optoelectronics, because of its ultrawide bandgap of 4.85 eV. Here, the bandgap modulation of (AlxGa1?x)2O3 thin films through varying Al contents is reported –and the achievement of high-performance p ...閱讀全文 -
05-252023Electrical and optical properties and defects of (100)- and (001)-oriented V-doped β-Ga2O3 crystals grown by EFG
Altering the n-type conductivity and optical properties of ultra-wide bandgap β-Ga2O3 by impurity doping has been a topic of research interest in the semiconductor field. Simultaneously, β-Ga2O3 with a monoclinic structure has exhibited interesting anisotrop ...閱讀全文 -
05-242023Crystal phase, electronic structure and surface band bending of InGaO alloy wide bandgap semiconductors
Ga2O3 is emerging as a promising wide-band-gap semiconductor for highpower electronics and deep ultraviolet optoelectronics. Alloying Ga2O3 with In2O3 leads to the modulation of the band gaps and possible carrier confinement achieved at the heterointerface. In ...閱讀全文 -
05-242023Controllability of β-Ga2O3 single crystal conductivity by V doping
The introduction of different elements into semiconductors to achieve conductivity control of n-type doping has considerable scientific significance and practical application prospects, which can further promote their extensive application in the field of elec ...閱讀全文 -
05-242023Effect of air annealing on the structural, electrical, and optical properties of V-doped β-Ga2O3 single crystals
V impurities were intentionally introduced into β-Ga2O3 crystals as n-type dopants to improve the n-type conductivity of single-crystal substrates. A high-quality 0.20 mol% V-doped β-Ga2O3 single crystal was fabricated, and the effects of air annealing on the ...閱讀全文